发明名称 METAL LINE HAVING DIFFUSION BARRIER AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A metal line having a diffusion barrier and a method for manufacturing the same are provided to be capable of improving the characteristics of the diffusion barrier and preventing the deterioration of conductivity by using a double layer made of Ti/TiN or Ta/TaN, and a triple layer made of W and WN. CONSTITUTION: A metal line is provided with the first barrier(114) formed at the inner portion of a connecting hole and an exposed lower metal line(102), the second barrier(116) formed at the upper portion of the first barrier, a copper seed layer formed on the second barrier, and a copper metal line connected with the exposed lower metal line. Preferably, the first barrier is a double layer structure made of Ti/TiN. Preferably, the second barrier is a triple layer structure made of W/WN/W.
申请公布号 KR20030087131(A) 申请公布日期 2003.11.13
申请号 KR20020024702 申请日期 2002.05.06
申请人 DONGBU ELECTRONICS CO., LTD. 发明人 JUNG, BYEONG HYEON;LEE, JAE SEOK
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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