发明名称 |
METAL LINE HAVING DIFFUSION BARRIER AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PURPOSE: A metal line having a diffusion barrier and a method for manufacturing the same are provided to be capable of improving the characteristics of the diffusion barrier and preventing the deterioration of conductivity by using a double layer made of Ti/TiN or Ta/TaN, and a triple layer made of W and WN. CONSTITUTION: A metal line is provided with the first barrier(114) formed at the inner portion of a connecting hole and an exposed lower metal line(102), the second barrier(116) formed at the upper portion of the first barrier, a copper seed layer formed on the second barrier, and a copper metal line connected with the exposed lower metal line. Preferably, the first barrier is a double layer structure made of Ti/TiN. Preferably, the second barrier is a triple layer structure made of W/WN/W.
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申请公布号 |
KR20030087131(A) |
申请公布日期 |
2003.11.13 |
申请号 |
KR20020024702 |
申请日期 |
2002.05.06 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
JUNG, BYEONG HYEON;LEE, JAE SEOK |
分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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