SEMICONDUCTOR CRYSTAL GROWING METHOD AND SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

Hydrogen ion (H<+>) is injected into a Si (111) substrate (base substrate) 10 at the approximately ambient temperature at a doping rate of 1 x 10<16>/cm<2> and at an accelerating voltage of 10keV. As a result, an ion injection layer whose ion concentration is locally high is formed at the depth h≒100nm from the surface (ion injection plane) by injecting ion. About 300nm of AlGaN buffer layer 20 is formed on the ion injection front of the Si substrate 10, and about 200 mu m of gallium nitride (GaN) layer 30 is deposited thereon as an objective semiconductor crystal. In this crystal growing process, the Si substrate 10 is ruptured at the ion injection layer and is finally separated into about 100nm of thin film part 11 and a main part of the Si substrate 10. According to this method for producing a semiconductor crystal, a single crystalline gallium nitride (GaN) which has more excellent crystallinity and less cracks than a conventional one can be obtained.