| 摘要 |
PURPOSE: A method for manufacturing a capacitor using a buried N-channel oxide layer is provided to be capable of reducing the thickness of the buried N-channel oxide layer when forming a gate oxide layer. CONSTITUTION: After forming a plurality of buried N-channel pattern(106,108) at the upper portion of a semiconductor substrate by using a buried N-channel mask, an ion implantation is carried out at the resultant structure. After forming a buried N-channel oxide layer(100,104) at the resultant structure, a gate oxide layer(102) is formed at the predetermined portion of the resultant structure. At this time, the thickness of the buried N-channel oxide layer is reduced by the gate oxide layer forming process. A poly layer(110) is then deposited on the resultant structure. After implanting POCl3 into the poly layer, a tungsten silicide layer and an arc oxynitride layer are formed on the resultant structure. Then, a transistor of a logic region is formed by using a poly mask and a flat cell line is formed at a ROM(Read Only Memory) block region toward the word line direction. A transistor pattern is then formed by selectively etching the poly layer.
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