| 摘要 |
A sensor for the detection of a molecular interaction comprising a metal insulator semiconductor (MIS) diode structure having a back contact and an exposed metal sensor electrode on which probe molecules can be immobilized, wherein the sensor is operative to produce a change in a capacitance-voltage (C-V) characteristic of the MIS diode structure in response to molecular interaction at the exposed surface of the metal sensor electrode. The sensor is particularly suitable for detecting biomolecular interactions such as the hybridization of DNA, when the sensor is prepared with suitable probe molecules immobilized on the exposed metal electrode. |
