PLASMA RAPID THERMAL PROCESSING(RTP) APPARATUS

摘要

PURPOSE: A plasma RTP(Rapid Thermal Processing) apparatus is provided to be capable of conserving a low thermal budget and improving temperature uniformity. CONSTITUTION: A plasma RTP apparatus is provided with a process chamber for stably loading a wafer, a heating part installed at the process chamber for heating the wafer, and a plasma supply part connected to the process chamber for supplying the process gas of radical state into the process chamber. At this time, the process chamber includes a jet part and an exhaust port(170) at the lateral portion of the same. At the time, the heating part includes a body part(210) and a plurality of lamps(220). Preferably, the inner portion of the process chamber is symmetrically formed by using a virtual line for connecting the jet part with the exhaust port as a reference, and the bottom portion of the process chamber is formed parallel with the wafer.