| 摘要 |
PURPOSE: A test circuit of a flash memory device is provided to reduce test cost of the semiconductor memory device by shortening program time while testing the flash memory device. CONSTITUTION: An X-address buffer(210) stores an address signal temporarily to select each word line of a memory cell array. An X-predecoder(220) receives an address signal being output from the X address buffer and the first select signal and the second select signal, and performs a program of the memory cell array in sequence according to the address signal during a normal mode, and pre decodes the address signal and the first and the second select signal to perform the program of the memory cell array according to the address signal and the first and the second select signal with an even word line or an odd word line or in a sector unit including the even word line and the odd word line.
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