METHOD FOR FABRICATING ACTIVE LAYER OF SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING METAL OXIDE SEMICONDUCTOR TRANSISTOR USING THE SAME

摘要

PURPOSE: A method for fabricating an active layer of a semiconductor device is provided to prevent a problem arising from germanium segregation by forming a high density germanium segregation layer on an interface between silicon germanium and an oxide so that the germanium segregation layer is used as a channel of a metal oxide semiconductor(MOS) transistor after a heat treatment process. CONSTITUTION: A silicon germanium layer(22) and a silicon layer are sequentially formed on a semiconductor substrate(21). The silicon layer is oxidized to form the germanium segregation layer(22a) on the silicon germanium layer. A heat treatment process is performed to uniformly distribute germanium of the germanium segregation layer.