GATE STRUCTURE FOR TRANSISTOR AND METHOD FOR FABRICATING TRANSISTOR WITH SUCH GATE STRUCTURE,申请号KR20030028626-传众专利搜索

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发明名称	GATE STRUCTURE FOR TRANSISTOR AND METHOD FOR FABRICATING TRANSISTOR WITH SUCH GATE STRUCTURE
摘要
申请公布号	KR20030086932(A)	申请公布日期	2003.11.12
申请号	KR20030028626	申请日期	2003.05.06
申请人		发明人
分类号	H01L21/336;H01L21/28;H01L29/49	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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