NON-VOLATILE MEMORY DEVICE WITH NON-FLAT GATE INSULATION LAYER AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A non-volatile memory(NVM) device with a non-flat gate insulation layer is provided to reduce a voltage applied to a control gate electrode in a program and erase operation by making an insulation layer under a charge storage layer have a non-flat thickness, and to improve the characteristic of the NVM device by preventing a trapping region injected in a program operation from extending to a lower insulation layer pattern. CONSTITUTION: A semiconductor substrate(100) is of the first conductivity type. The charge storage layer, an upper insulation layer and the control gate electrode are sequentially formed on the semiconductor substrate. The lower insulation layer pattern(112) and a tunnel insulation layer pattern are interposed between the charge storage layer and the semiconductor substrate. A high density impurity region(140) of the first conductivity type is formed in the semiconductor substrate under the tunnel insulation layer pattern. The tunnel insulation layer pattern has a thickness greater than that of the lower insulation layer pattern, disposed on the side surface of the lower insulation layer pattern.