| 摘要 |
<p>1,274,563. Semi-conductor rectifiers. A. L. SARALIDZE, and A. L. EFREMIDI. 2 Oct., 1970, No. 46889/70. Heading H1K. A high voltage silicon semi-conductor rectifier unit comprises a chain 1 of series diodes 2 disposed between two common opposed metal screens 3, 4 symmetrically inclined to the plane of the diodes; + ve end of the chain being connected to earth and screen 3 while - ve end b is connected to live supply and screen 4. The chain is split into groups 5, each capacitance shunted at 6, and disposed within subordinate opposed metal screens connected to corresponding ends (Fig. 1). Structurally (Figs. 2, 3, 4, not shown), the diodes and capacitors are arranged in a single layer in a flat surface to reduce mutual inductance, and the distributed capacitance between the common and the group screens 3, 4 and 7, 8 varies along the chain according to a law predetermined by the inter-screen spacing, and each group 5 comprising two epoxy potted rectifier stacks, is carried by insulators and disposed between group screens 7, 8 and shunted by capacitors 6. Stepped insulation is disposed between screens 3, 4 and 7, 8. The insulation thickness and inter-screen capacitance are graduated for each diode in accordance with its potential. The outer screens 3, 4 are jumpered to the ends of the diode chain and led out through insulator bushings, while the unit is enclosed in an insulated casing or may be oil-immersed. At lower voltages group screens 7, 8 may be dispensed with.</p> |
