| 摘要 |
PROBLEM TO BE SOLVED: To provide a raw material compound for La, being more easily heat decomposed/deposited than La(dpm)<SB>3</SB>, forming a ferroelectric film even if a substrate temperature is as low as 450°C in producing a PLZT film by CVD supplying the raw material by a solution vaporizing method, and to provide a method for producing the compound and a method for forming the PLZT film. SOLUTION: The preferable PLZT film is obtained by using La(dibm)<SB>3</SB>as a La source, vaporizing and supplying, at 240°C, an n-butyl acetate solution of a combination comprising Pb(dpm)<SB>2</SB>-La(dibm)<SB>3</SB>-Zr(OiPr)(dpm)<SB>3</SB>-Ti(OiPr)<SB>2</SB>(dibm)<SB>2</SB>and forming the film by CVD in an oxygen atmosphere at 450°C substrate temperature and 1 Torr CVD chamber pressure. The La(dibm)<SB>3</SB>has 110°C melting point, a large solubility and 0.1 Torr vapor pressure at 195°C and its n-butyl acetate solution has 3 month pot life. COPYRIGHT: (C)2004,JPO
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