发明名称 Ferroelectric memory input/output apparatus
摘要 A memory system. The system includes at least two ferroelectric memory devices arranged sequentially. Each memory device has a data in signal and a data out signal, and the data out signal each memory device is transmitted as the data in signal of the next device in sequence. A system controller generates an initial data in signal for the first memory device. A data bus transfers data between each memory device and the system controller and an address bus provide addressing of the memory devices.
申请公布号 US6646903(B2) 申请公布日期 2003.11.11
申请号 US20010005676 申请日期 2001.12.03
申请人 INTEL CORPORATION 发明人 CHOW DAVID GENLONG
分类号 G11C11/22;(IPC1-7):G11C11/00 主分类号 G11C11/22
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