| 摘要 |
Disclosed is a method for preparing ferroelectric semiconductive coatings which is capable of coating the ferroelectric semiconductor onto a metal and forming electron-hole pairs on the surface of the ferroelectric semiconductor by using 440 V and 30K~100K Hz alternating current electric energy of a high voltage and a high frequency as an energy source, based upon an energy level difference between the semiconductor and the metal, whereby it can exhibit an effective surface reaction in the range of the oxidation and reduction reaction even in the closed space where no ultraviolet irradiation occurs.
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