| 摘要 |
A method for forming a dielectric film of a capacitor includes injecting a first source containing a first component into a reaction chamber to be adsorbed on a surface of a substrate, purging residual first source out of the reaction chamber, injecting a mixed gas of Ar and O2 in plasma state into the reaction chamber to react with the first component adsorbed on the substrate, purging by-products and residual gas out of the reaction chamber, injecting a second source containing a second component into the reaction chamber to be adsorbed to the surface of the resulting structure, purging residual second source out of the reaction chamber, injecting a mixed gas of Ar and O2 in plasma state into the reaction chamber to induce oxidation reaction and purging residual gas and by-products out of the reaction chamber using mixed gas of Ar and O2 for obtaining sufficient capacitance for highly integrated semiconductor devices.
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