发明名称 |
Semiconductor memory device with bit lines having reduced cross-talk |
摘要 |
A semiconductor memory device is fabricated to have a multi-layered structure on a semiconductor substrate. The semiconductor memory device includes ground lines, which are formed in a first conductive layer; bit lines, which are formed in a second conductive layer; and word lines, which are formed in a third conductive layer. The bit lines are not formed in the uppermost conductive layer.
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申请公布号 |
US6646312(B1) |
申请公布日期 |
2003.11.11 |
申请号 |
US20000628044 |
申请日期 |
2000.07.28 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
KIKUCHI HIDEKAZU |
分类号 |
H01L21/768;H01L21/8246;H01L23/522;H01L27/112;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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