发明名称 |
Treat resist surface to prevent pattern collapse |
摘要 |
The present invention relates to systems and methods for increasing the hydrophobicity of patterned resists. In one embodiment, the present invention relates to a method of processing an ultra-thin resist, involving depositing the ultra-thin photoresist over a semiconductor substrate; irradiating the ultra-thin resist with electromagnetic radiation; developing the ultra-thin resist with a developer to form a patterned resist, the patterned resist having a surface with a first hydrophobicity; contacting the patterned resist with a transition solvent to provide the surface of the patterned resist with a second hydrophobicity, wherein the second hydrophobicity is greater than the first hydrophobicity and contact of the patterned resist with the transition is conducted between developing the ultra-thin resist and rinsing patterned resist; and rinsing the patterned resist having the second hydrophobicity with an aqueous solution.
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申请公布号 |
US6645702(B1) |
申请公布日期 |
2003.11.11 |
申请号 |
US20020050438 |
申请日期 |
2002.01.16 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
RANGARAJAN BHARATH;TEMPLETON MICHAEL K.;SINGH BHANWAR |
分类号 |
G03F7/26;H01L21/027;H01L21/311;H01L21/3213;(IPC1-7):G03F7/00 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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