发明名称 Copper sputtering target assembly and method of making same
摘要 Described is a sputtering target assembly of high purity copper diffusion bonded to a precipitation hardened aluminum alloy backing plate via an intermediate layer of a CuCr alloy and in which the copper contains a micro alloy addition of at least one of Ag, Su, Te, In, Mg, B, Bi, Sb and/or P. Also disclosed is a method that includes preparation of a master alloy for addition to high purity copper and fabricating, heat treating and diffusion bonding processes to produce a sputtering target assembly with a stable fine-grained target microstructure.
申请公布号 US6645427(B1) 申请公布日期 2003.11.11
申请号 US20000556488 申请日期 2000.04.21
申请人 HONEYWELL INTERNATIONAL INC. 发明人 KARDOKUS JANINE K.;WU CHI TSE;PARFENIUK CHRISTOPHER L.;BUEHLER JANE E.
分类号 B23K35/00;B23K35/30;C22C9/00;C23C14/34;H01J37/34;H01L21/28;H01L21/285;(IPC1-7):C22C9/00 主分类号 B23K35/00
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