| 发明名称 |
Magnetic memory using reverse magnetic field to improve half-select margin |
| 摘要 |
A magnetic memory includes a circuit configured to apply a reverse magnetic field to one or more half-selected magnetic memory cells to improve half-select margin in the magnetic memory.
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| 申请公布号 |
US6646910(B2) |
申请公布日期 |
2003.11.11 |
| 申请号 |
US20020090246 |
申请日期 |
2002.03.04 |
| 申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
BLOOMQUIST DARREL R.;BHATTACHARYYA MANOJ K.;ANTHONY THOMAS C. |
| 分类号 |
G11C11/15;(IPC1-7):G11C11/00;G11C11/114 |
主分类号 |
G11C11/15 |
| 代理机构 |
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