| 摘要 |
1276679 Silicon layers CENTRE ELECTRONIQUE HORLOGER SA 5 June 1969 [20 June 1968] 28567/69 Heading C1A [Also in Division H1] A polycrystalline layer of silicon, containing 0À008-0À016 mole per cent of SiO 2 and 0À01- 0À022 mol. per cent C (both based on the deposited pure silicon) is deposited on a substrate by vapour phase decomposition. The preferred precursors of the three components are trichlorosilane (Si), tetraethoxysilane (SiO 2 ), and toluol (C) and a preferred substrate is monocrystalline silicon. This process may be a step in the production of integrated circuits and the produced integrated circuits are also claimed. |
