| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing Bi<SB>3.25</SB>La<SB>0.75</SB>Ti<SB>3</SB>O<SB>12</SB>(hereafter, referred to as BLT) film by CVD involving feeding a raw material by a solution vaporization system through specifying a La raw material compound as a La source easier in thermal decomposition deposition than La(dpm)<SB>3</SB>[tris(dipivaloylmethanato)lanthanoid] and affording ferroelectric film even if the substrate temperature is as low as 500°C, and to provide a method for producing the La raw material compound. SOLUTION: The high-quality BLT film is obtained by the following procedure. La(dibm)<SB>3</SB>[tris(diisobutylymethanato)lanthanoid] is used as the La source, an n-butyl acetate solution of a combination of Bi(dpm)<SB>3</SB>-La(dipm)<SB>3</SB>-Ti(OiPr)<SB>2</SB>(dpm)<SB>2</SB>is vaporized at 240°C and fed, and a CVD is carried out under an oxygen atmosphere at a substrate temperature of 500°C and a CVD chamber pressure of 1 Torr. The La(dibm)<SB>3</SB>has a melting point of 110°C and high solubility, having a vapor pressure of 0.1 Torr/195°C, and its n-butyl acetate solution has a pot-life of 3 month. COPYRIGHT: (C)2004,JPO
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