SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME, SiC WAFER WITH EPITAXIAL FILM AND METHOD FOR PRODUCING THE SAME, AND SiC ELECTRONIC DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a high-quality SiC single crystal containing substantially no dislocation and defects and to provide a method for producing the same; to obtain an SiC wafer with an epitaxial film containing substantially no defects and dislocation in the epitaxial film and to provide a method for producing the same; and to provide an SiC device showing substantially no occurrence of leak current and reduction of withstand voltage. SOLUTION: A first seed crystal is prepared in which the plane inclined 1°-90°from the [0001] plane is exposed as a first growing plane. An n-th seed crystal is prepared which has an n-th inclined direction at a location 45°-135°rotated from an (n-1)-th inclined direction about <0001> as a rotation axis and in which the plane inclined 1°-90°from the [0001] plane is exposed as an n-th growing plane. An n-th growing crystal is prepared by growing the SiC single crystal on the n-th growing plane of the n-th seed crystal. COPYRIGHT: (C)2004,JPO