| 发明名称 |
Method for improving a doping profile for gas phase doping |
| 摘要 |
A method for improving a doping profile using gas phase doping is described. In the method, silicon nitride and/or products of decomposition from a silicon nitride deposition are introduced in a process chamber before or during the actual gas phase doping. This allows the doping profile to be significantly improved.
|
| 申请公布号 |
US6645839(B2) |
申请公布日期 |
2003.11.11 |
| 申请号 |
US20020139165 |
申请日期 |
2002.05.06 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
HAUPT MORITZ;MORGENSCHWEIS ANJA;OTTENWAELDER DIETMAR;SCHROEDER UWE |
| 分类号 |
H01L21/223;H01L21/8242;(IPC1-7):H01L21/38 |
主分类号 |
H01L21/223 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
