发明名称 |
Method of forming a silicon nitride layer on a substrate |
摘要 |
The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer. A semiconductor wafer is located on a susceptor within a semiconductor processing chamber. A carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the semiconductor processing chamber and a semiconductor wafer is exposed to the mixture of gases at a pressure in the chamber in the range of approximately 100 to 500 Torr.
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申请公布号 |
US6645884(B1) |
申请公布日期 |
2003.11.11 |
申请号 |
US19990350810 |
申请日期 |
1999.07.09 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
YANG MICHAEL X.;KAO CHIEN-TEH;LITTAU KARL;CHEN STEVEN A.;HO HENRY;YU YING |
分类号 |
C23C16/42;C23C16/34;C23C16/44;H01L21/31;H01L21/318;(IPC1-7):H01L21/02 |
主分类号 |
C23C16/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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