发明名称 |
Thermally stable crystalline defect-free germanium bonded to silicon and silicon dioxide |
摘要 |
A wafer pair comprising a substantially defect-free germanium wafer and methods of making the same. The wafer pair comprises the substantially defect-free germanium wafer directly bonded to a silicon wafer. The method of making the wafer pair comprises placing the silicon wafer in a wafer-bonding chamber, placing the germanium wafer on top or on bottom of the silicon wafer, and applying a local force to either the germanium wafer or to the silicon wafer to initiate bonding of the germanium wafer to the silicon wafer. The bonding occurs under a temperature ranging from about 23° C. to about 600° C. and under a vacuum condition inside a wafer-bonding chamber.
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申请公布号 |
US6645831(B1) |
申请公布日期 |
2003.11.11 |
申请号 |
US20020141596 |
申请日期 |
2002.05.07 |
申请人 |
INTEL CORPORATION |
发明人 |
SHAHEEN MOHAMAD A.;JIN BEENYIH;CHAU ROBERT S. |
分类号 |
H01L21/18;H01L21/285;H01L21/762;H01L29/165;H01L29/45;(IPC1-7):H01L21/30 |
主分类号 |
H01L21/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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