发明名称 |
Method of catalyzing copper deposition in a damascene structure by plasma treating the barrier layer and then applying a catalyst such as iodine or iodine compounds to the barrier layer |
摘要 |
A method of manufacturing a copper metal wiring in a semiconductor device, by which a plasma process is performed before a diffusion barrier layer is formed and a chemical pre-process using a chemical enhancer is performed so that copper is deposited to form a metal wiring by a chemically enhanced chemical vapor deposition (CECVD) method. The method allows the chemical enhancer to be adhered on the diffusion barrier layer uniformly and stably; therefore, improving the deposition property of a copper thin film.
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申请公布号 |
US6645858(B2) |
申请公布日期 |
2003.11.11 |
申请号 |
US20010875625 |
申请日期 |
2001.06.06 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO. |
发明人 |
PYO SUNG GYU;KIM SI BUM |
分类号 |
C23C16/18;C23C16/34;H01L21/28;H01L21/285;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/44;H01L21/476;H05H1/00 |
主分类号 |
C23C16/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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