| 摘要 |
A ferroelectric random access memory (FeRAM) device including a semiconductor substrate, a transistor, a first interlayer insulating film formed on the transistor, a plug buried in a contact hole exposing the source/drain region of the transistor, a metal diffusion barrier film formed by depositing a Ti and/or TiN on the contact hole, an Ir oxidation barrier film formed on the plug and the first interlayer insulating film, a lateral oxidation barrier film formed on sidewalls of the first oxidation barrier film and on a portion of the first interlayer insulating film in order to prevent oxygen from diffusing into an interface therebetween, a bottom electrode formed on the first oxidation barrier film and the lateral oxidation barrier film, a ferroelectric film formed on the bottom electrode, and a top electrode formed on the ferroelectric film.
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