发明名称 Capacitor and method for fabricating the same
摘要 The capacitor comprises a lower layer electrode 22 formed on a substrate 10 with an inter-layer insulation film 12 therebetween; an upper layer electrode 24 opposed to the lower layer electrode 22 with an inter-layer insulation film 12 therebetween, a lower interconnection layer 14 formed between the substrate 10 and the lower layer electrode 22, and electrically connected to the upper layer electrode 24, whereby the parasitic capacitance, which is a cause for lower capacitor accuracy, useless power consumption, etc. can be drastically decreased, and external noises can be shielded off.
申请公布号 US6646860(B2) 申请公布日期 2003.11.11
申请号 US20020102798 申请日期 2002.03.22
申请人 FUJITSU LIMITED 发明人 TAKARAMOTO TOSHIHARU;GOTOH KUNIHIKO
分类号 H01L21/768;H01L21/02;H01L21/822;H01L23/522;H01L27/04;H01L27/08;(IPC1-7):H01G4/228 主分类号 H01L21/768
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