发明名称 METHOD FOR PRODUCING InP SINGLE CRYSTAL AND InP SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method for producing an InP single crystal capable of further reducing the ratio of occurrence of a twin crystal at an enlarged diameter part, and to provide the InP single crystal in which the formation of the twin crystal at the enlarged diameter part and a fixed diameter part is suppressed. SOLUTION: For producing InP single crystal 10 with the crystal direction of <100>, the angle (enlarged diameter part angle) formed by a tangent of a visible outline of an enlarged diameter part 13 and its axis is made larger than 35.3°in a region where the diameter of the enlarged diameter part 13 ranges from 10 mm to 70% of the diameter of a fixed diameter part 11, in the cross section including the axis. Further, when the visible outline of the enlarged diameter part 13 is represented by a function of (x) and (r), wherein (x) denotes the axis in the direction of InP single crystal 10 and (r) denotes the axis in the direction of a diameter, the enlarged diameter part 13 is formed to satisfy the expression: 0<d<SP>2</SP>r/dx<SP>2</SP>≤0.1 in the region where the diameter of the enlarged diameter part 13 ranges from 10 mm to 70% of the diameter of the fixed diameter part 11. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003321295(A) 申请公布日期 2003.11.11
申请号 JP20020128554 申请日期 2002.04.30
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 KIMURA MASAKI;IKEDA ATSUSHI
分类号 C30B15/20;C30B15/00;C30B29/40;(IPC1-7):C30B15/20 主分类号 C30B15/20
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