| 摘要 |
A built-in-self-test (BIST) circuit for RAMBUS DRAM is disclosed. Unlike other conventional memory devices, a RAMBUS DRAM operates at a much higher speed (e.g., 400 MHz) with a complicated protocol imposed on its input stimuli. In order to provide at-speed testing, a new BIST architecture is needed. The new architecture consists of three major components-two interacting finite state machines (FSMs) and a high-speed time-division multiplexer. The two finite state machines, defining the underlying test algorithms jointly, are used to generate a sequence of generic memory commands. Through the time-division multiplexer, each memory command is then further mapped into a multi-cycle packet compliant to the specification of a target RAMBUS DRAM. Among these components, the finite state machines often form the performance bottleneck. A simple master-slave synchronization mechanism is used to convert these two finite state machines into a multi-cycle path component, thereby eliminating the timing criticality.
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