发明名称 |
Method for the production of a field-effect structure |
摘要 |
In a method for the production of a field-effect structure and a field-effect structure, a movable gate structure is arranged above a gate region in a substrate between a drain and a source. The gate region is covered with a gate oxide. The movable gate structure is created from silicon-germanium and in an intermediate step of the production method is arranged on a germanium sacrificial layer on the gate oxide.
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申请公布号 |
US6645800(B2) |
申请公布日期 |
2003.11.11 |
申请号 |
US20010016259 |
申请日期 |
2001.10.26 |
申请人 |
ROBERT BOSCH GMBH |
发明人 |
FREY WILHELM;LAERMER FRANZ;HEYERS KLAUS |
分类号 |
B81B3/00;B81C1/00;G01P15/08;G01P15/12;H01L21/3065;H01L29/78;(IPC1-7):H01L21/823 |
主分类号 |
B81B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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