摘要 |
A stabilized capacitor using high dielectric constant dielectric materials, such as Ta2O5 and BaxSr(1-x)TiO3, and methods of making such capacitors are provided. A preferred method includes chemical vapor depositing a metal electrode, oxygen doping the metal electrode, oxidizing a surface of the oxygen doped metal electrode, depositing a high dielectric constant oxide dielectric material on the oxidized oxygen-doped metal electrode, and depositing an upper layer electrode on the high dielectric constant oxide dielectric material.
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