METHOD FOR MANUFACTURING MOS FIELD EFFECT TRANSISTOR(FET)

摘要

PURPOSE: A method for manufacturing an MOS(Metal Oxide Semiconductor) FET(Field Effect Transistor) is provided to be capable of reducing junction leakage current for improving electrical characteristics. CONSTITUTION: A gate oxide layer and a gate electrode are sequentially formed on a semiconductor substrate(20). A sacrificial oxide layer is formed on the entire surface of the resultant structure. A low concentration diffusion region(28) is formed at both sides of the gate electrode in the semiconductor substrate by implanting predetermined ions into the resultant structure. An oxide layer is formed on the entire surface of the resultant structure by carrying out a CVD(Chemical Vapor Deposition) process. A spacer(32) having a sharp lateral portion is formed at both sidewalls of the gate electrode by sequentially carrying out a dry and wet etching process on the oxide layer. A high concentration diffusion region(34) is formed at the overlapped portion with the low concentration diffusion region by carrying out an ion implantation using the spacer as a mask.