| 摘要 |
PURPOSE: A method for forming a metal line is provided to be capable of improving the degree of integration. CONSTITUTION: An insulation layer(12) having a contact hole is formed on a silicon substrate(11). A Ti layer(14) is deposited on the entire surface of the resultant structure by carrying out a CVD(Chemical Vapor Deposition) process. The Ti layer is partially transformed into a TiN layer(16) by in-situ using mixed gas plasma of nitrogen and oxygen. Then, a metal layer(17) is deposited on the resultant structure. Preferably, the Ti layer is deposited under a deposition temperature of 300-700 °C, a deposition pressure of 0.5-10 Torr, a TiCl4 source flow of 1-20 sccm, a nitrogen flow of 10-1000 sccm, and a hydrogen flow of 100-3000 sccm. Preferably, the in-situ plasma treatment is performed under nitrogen gas of 10-500 sccm, hydrogen gas of 10-500 sccm, a plasma process temperature of 300-700 °C, a plasma process pressure of 1-50 Torr, and an RF(Radio Frequency) power of 100-1000 Watt.
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