| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a mask, shortened in TAT (turn-around time) and reduced in cost, and to provide a method for manufactur ing a semiconductor device. <P>SOLUTION: The method for manufacturing a mask comprises: an electron beam-aided process of drawing a pattern on a first thin-film resist; a process of forming a first mask by etching a first thin film by using the resist as the mask; a process of screening defective parts in the pattern of the first mask; a process of transferring the pattern except the screened parts by 1:1 exposure onto the resist on a second thin film through the first mask; a process of electron beam-aided drawing of patterns for the screened parts; and a process of forming a second mask by etching the second thin film by using the resist as the mask. The method for manufacturing a semiconductor device comprises the mask manufacturing method. <P>COPYRIGHT: (C)2004,JPO</p> |
