| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can narrow a gate length while avoiding that the width of wirings becomes narrower. SOLUTION: The method for manufacturing the semiconductor device comprises the steps of: exposing a resist film 16 by using a gate electrode forming mask (Levenson-type phase-shift mask); developing the film 16 to thereby form the resist pattern 16b of the film 16; etching an antireflection film 15 with the pattern 16b used as an etching mask; and trimming the pattern 16b and the film 15. The condition of this trimming is etching the pattern 16b and the film 15 made of an organic material without etching a hard mask made of an inorganic material. Since the region to be matched with the wiring pattern of the mask 14 is completely covered with the pattern 16b before and after the trimming of the pattern 16b and the film 15, the wirings are prevented from being disconnected and retracted. COPYRIGHT: (C)2004,JPO |
