发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which stability of read or write operation can be secured. SOLUTION: In read or write operation, in a freeze releasing circuit 60 in a semiconductor memory device, when a row-act signal /ROWACT is not activated in the prescribed period decided by a trailing edge delay circuit DL10 after a chip enable-signal/CE is made an H level, a freeze reset signal /FREEZRST is outputted from a logic gate L14 after the elapse of the prescribed period. Consequently, the semiconductor memory device finishes write or read operation. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003317471(A) 申请公布日期 2003.11.07
申请号 JP20020113788 申请日期 2002.04.16
申请人 MITSUBISHI ELECTRIC CORP 发明人 TSUKIDE MASAKI
分类号 G11C11/403;G11C11/406;(IPC1-7):G11C11/403 主分类号 G11C11/403
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