| 摘要 |
PURPOSE: A method for forming a metal thin film is provided to be capable of preventing previously peeling of the metal thin film on a semiconductor device. CONSTITUTION: A transistor is formed on a semiconductor substrate having an oxide layer(100) and a polysilicon layer(102). A TEOS layer(104) and a BPSG layer(106) as a PMD are deposited on the resultant structure. A barrier metal film(108) is formed on the BPSG layer and annealed. The first metal film(110) is formed on the barrier metal film. A PE-TEOS layer(112) as the first IMD(Inter-Metal Dielectric) and an SOG layer(114) are sequentially formed. A USG layer(116) as the second IMD is formed on the SOG layer. A zinc oxide layer(118) is formed on the second IMD, and the second metal film(120) is formed on the zinc oxide layer.
|
