| 摘要 |
PURPOSE: A CMOS(Complementary Metal Oxide Semiconductor) image sensor is provided to be capable of preventing dark current from being increased by implanting phosphor ions for forming a low concentration impurity region. CONSTITUTION: A CMOS image sensor is provided with a photo diode and an active pixel block for transmitting and outputting the electric charges generated at the photo diode. At this time, the active pixel block includes a gate(45) formed at the upper portion of a silicon substrate(41), a gate spacer(47) formed at both sidewalls of the gate, a low concentration source/drain region(49) formed in the first predetermined portion of the silicon substrate by implanting phosphor ions, and a high concentration source/drain region(51) formed in the second predetermined portion of the silicon substrate by implanting arsenic ions.
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