| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor which is insulating and ferromagnetic. <P>SOLUTION: A part of an element of group II contained in a semiconductor of II-VI groups is replaced with Cr through a molecular epitaxy method so as to synthesize the insulating ferromagnetic semiconductor. Zn, Cd, of Hg is selected as the element of group II, and S, Se, Te, or O is selected as the element of group VI. The insulating ferromagnetic semiconductor grows to a single crystal on a substrate such as a GaAs single crystal substrate, a sapphire single crystal substrate, a glass substrate or the like having the same crystal structure with the semiconductor mother phase of groups II-VI and a lattice constant nearly equal to that of the semiconductor of groups II-VI. The insulating ferromagnetic semiconductor varies in electrical resistivity as reacting very sensitively to a very weak magnetic field, so that it is suitable as a high-sensitivity magnetic sensing material such as a sensor material and magnetic read/write head material. <P>COPYRIGHT: (C)2004,JPO |
