LnCuO (S, Se, Te) MONOCRYSTALLINE THIN FILM, ITS MANUFACTURING METHOD AND OPTICAL DEVICE OR ELECTRONIC DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To solve such inconvenience that conventional LnCuOX films have been manufactured by growing an amorphous film under appropriate conditions by a sputtering method and then annealing it at high temperatures, and have not displayed sufficiently high light-emitting efficiency and electron mobility as a luminous element and an electronic element material due to the fact that they are all polycrystalline.

SOLUTION: A thin film as a base material is grown on a single crystal substrate, and an amorphous or polycrystalline LnCuOX (wherein, Ln denotes at least one kind of lanthanoids or Y; and X denotes at least one kind of S, Se or Te) thin film is deposited on it. After that, it is annealed at a high temperature of 500°C or above. A thin film with good crystallinity suitable for a single crystal for a light-emitting diode element, a semiconductor laser element, a field-effect transistor element or a heterobipolar transistor element can be grown.

COPYRIGHT: (C)2004,JPO