| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To avoid decrease of the coupling ratio resulting from the difficulty of collective machining of a control gate material, an interlayer insulation film material and a floating gate material incident to reduction in the width of a word line of a nonvolatile semiconductor memory, and to avoid damage on a gate oxide film at the time of collective machining. <P>SOLUTION: Prior to fabricating the floating gate of a memory cell in a nonvolatile memory, a space surrounded on all sides by an insulation film is made for the floating gate of each cell such that each floating gate is buried in each space. It can be realized through self-aligned machining of the floating gate following to deposition of a floating gate material film. Since collective machining of a control gate material, an interlayer insulation film material and a floating gate material is not required at the time of machining a control gate, a sufficient interlayer insulation film capacity can be ensured. <P>COPYRIGHT: (C)2004,JPO</p> |
