FLATTENED TUNNEL MAGNETORESISTANCE ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a flattened tunnel magnetoresistance element having high alignment and a flat interface without being influenced by the structure and irregularities of a ground such as an amorphous substance and a polycrystalline substance. SOLUTION: The flattened tunnel magnetoresistance element has a ground layer consisting of double layers of a MgO amorphous layer 2 and a MgO (001) high alignment layer 3. COPYRIGHT: (C)2004,JPO