| 摘要 |
PROBLEM TO BE SOLVED: To correct characteristics of a TMR element of an MRAM after assembling. SOLUTION: Immediately under the TMR element 23, a write word line 20B is disposed. The write word line 20B is extended in an X direction, and side faces and the bottom face of the write word line 20B are covered with a hard magnetic material 51 and a yoke material 25B. The hard magnetic material 51 is magnetized by an overcurrent which is conducted in the write word line 20B, and the characteristics of the TMR element 23 are corrected by the residual magnetization of the hard magnetic material 51. Immediately above the TMR element 23, a data selection line (read/write bit line) 24 is disposed. The data selection line 24 is extended in a Y direction which crosses the X direction. Part of the top face of the data selection line 24 is covered with a yoke material 27. COPYRIGHT: (C)2004,JPO
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