THIN FILM MAGNETIC STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a thin film magnetic storage device from which data can be fast read by shortening a charging time of a data line from a data reading start. SOLUTION: In reading data, a sense enable signal is first activated to start to charge the data line before forming a current path including the data line and a selection memory cell in accordance with row and column selection operation. By completing data line charging at an early stage, a time from the data reading start until a passing current difference of the data line reaches a level corresponding to stored data of the selection memory cell is shortened to be able to accelerate data reading. COPYRIGHT: (C)2004,JPO