发明名称 |
SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR DEVICE USING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor element which has the effect of lowering its forward voltage VF rather than raising it even if a semiconductor substrate is thick. SOLUTION: A method is for manufacturing a semiconductor element 7 which has an anode electrode 3 and a cathode electrode 4 arranged on only the surface of the semiconductor substrate 1 and a metal layer 6 as a non- electrode in ohmic-contact with the substrate 1 on the reverse surface 5 of the substrate 1, and the method is for manufacturing the semiconductor element 7 which patterns the metal layer 6, and a semiconductor device 12 which has an insulating layer 11 on the metal layer 6. COPYRIGHT: (C)2004,JPO |
申请公布号 |
JP2003318387(A) |
申请公布日期 |
2003.11.07 |
申请号 |
JP20020118891 |
申请日期 |
2002.04.22 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
YAMAMOTO HIROKO;MIZUKAMI MINORU |
分类号 |
H01L29/872;H01L29/47;(IPC1-7):H01L29/47 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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