发明名称 TWO PHASE PRE-CHARGE CIRCUIT, AND CANCEL CIRCUIT FOR CURRENT AT STANDBY OF SHORT CIRCUIT OF DRAM
摘要 PROBLEM TO BE SOLVED: To provide a two phase pre-charge circuit coping with quality request for a low power DRAM element and a cancel circuit for current at the time of standby of short circuit of a DRAM element constituted by combining the circuits. SOLUTION: A two phase pre-charge circuit is operated so that voltage by a pre-charge voltage source is applied to bit lines in an operation mode period, but the circuit is turned to be in an off-state in a standby mode period. Therefore, a current when standby caused by short circuit of a bit line and a word line is cancelled. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003317480(A) 申请公布日期 2003.11.07
申请号 JP20030088683 申请日期 2003.03.27
申请人 WINBOND ELECTRON CORP 发明人 CHEN CHIENG CHUNG
分类号 G11C11/409;G11C7/12;G11C11/401;G11C11/4094;(IPC1-7):G11C11/409 主分类号 G11C11/409
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