发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor-element manufacturing method capable of securely removing the undesirable resist that is formed in the circumferential part of an auxiliary substrate with good productivity, after forming the resist on a semiconductor substrate bonded with the auxiliary substrate. SOLUTION: The vacuum suction of a GaAs substrate 1 to a vacuum chuck 5 is performed, and a positive resist 4 is exposed through a mask 7a from an exposing light source 6a to perform patterning. Then, the undesirable resist 4a that is formed in the circumferential part of the auxiliary substrate 2 through the mask 7b is exposed, while the auxiliary substrate 2 is tilted to the exposing light source 6b and rotated. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003318202(A) 申请公布日期 2003.11.07
申请号 JP20020117180 申请日期 2002.04.19
申请人 NEC KANSAI LTD 发明人 WAKABAYASHI YOSHIMASA
分类号 H01L21/027;H01L21/50;H01L21/52;(IPC1-7):H01L21/50 主分类号 H01L21/027
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