DRAM CELL STRUCTURE CAPABLE OF HIGH INTEGRATION AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A DRAM(Dynamic Random Access Memory) cell structure capable of high integration and a manufacturing method thereof are provided to be capable of overcoming the limit of the size and length of a word line by using a trench type capacitor and a vertical cylinder type transistor connected with the capacitor. CONSTITUTION: A DRAM cell structure capable of high integration is provided with a silicon substrate(300), a trench type capacitor formed at the lower portion of a trench and a vertical cylinder type transistor connected with the upper portion of the trench type capacitor. Preferably, the trench type capacitor includes a plate electrode(320) formed at the lower wall of the trench, a dielectric layer(322) connected with the plate electrode, and a storage node(324) formed on the dielectric layer corresponding to the plate electrode.