| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element that can prevent the formation of a cavity in a laminated structure or can significantly reduce the size of a cavity formed in the laminated structure, and to provide a method of manufacturing the element. SOLUTION: In the semiconductor laser element, a ridge stripe section 23 constituted by laminating a p-type Al<SB>0.5</SB>Ga<SB>0.5</SB>As second upper clad layer 9 and a p-type GaAs cap layer 10 upon another and extended toward a resonator with a prescribed pattern width is formed on a p-type multilayered etching stop layer 8. The etching stop layer 8 has a first etching stop layer 8b and a second etching stop layer 8c. The first etching stop layer 8b is made of the same material as the p-type Al<SB>0.5</SB>Ga<SB>0.5</SB>As second upper clad layer 9 and the second etching stop layer 8c is made of the same material as the p-type GaAs cap layer 10. COPYRIGHT: (C)2004,JPO
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