| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where occurrence of a defect in an epitaxial layer of a device forming region, which is caused by formation of a buried layer, can be prevented and can be easily manufactured, and its manufacturing method. SOLUTION: An n-type buried layer is formed on a semiconductor substrate 1 in a device forming region A. In a region B adjacent to the region A, a buried region 9 for causing the defect, which consists of an n-type impurity diffusion region 7 and a p-type impurity diffusion region 8 located to contact with both sides of the n-type impurity diffusion region 7, is formed. An n-type epitaxial layer 2 is grown on both of the device forming region A and the adjacent region B. In the adjacent region B, a stress concentrates on the n-type epitaxial layer 2 grown from the interface portion between the impurity diffusion regions 7 and 8 to cause the defect 10, thereby, the excellent n-type epitaxial layer 2 in which the occurrence of defect is inhibited can be formed in the device forming region A. COPYRIGHT: (C)2004,JPO
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